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Researchers have been aggressively investigating group-IV (Ge, SiGeSn, GeSn) optoelectronic materials to realize tunable wavelength lasers, photodetectors, and transistors. By exploiting strain and bandgap engineering of these materials via choice of substrate orientation and intelligent buffer engineering as well as precise control of Sn alloy composition during material synthesis, it will offer widespread device applications. There is an opportunity to improve the device-level quality of GeSn material systems along with higher Sn incorporation that face growth challenges during epitaxy. The current research work presents the substrate orientation and misorientation (100)/2˚, (100)/6˚, (110), (111) mediated epitaxial GeSn and Ge optoelectronic materials synthesized via MBE and analyzed using several analytical tools. X-ray analysis demonstrated high quality GeSn materials with less broadening and good symmetricity on (100) compared to (110) GeSn materials. Minority carrier lifetimes of these GeSn epilayers were extracted as > 400 ns for the (100) substrate misoriented by 6˚ towards [110] direction. Raman spectroscopy measurements were performed to study the vibrational properties, where the LO phonon wavenumber shifts at ωLO = 301.11 ± 0.8 cm¬–1 from (100)/2˚, (100)/6˚ and (110) oriented GeSn epilayers that were synthesized in equivalent growth conditions. Cross-sectional TEM of (100)/2˚ GeSn sample was performed that revealed good quality GeSn material on GaAs. Elimination of the interfaced electronic dipole charge effects, that destabilize the group-IV/group III-V heterointerface and further layer growths, is attributed to aid in achieving superior quality GeSn epitaxial materials over a (100) substrate that is misoriented by 6˚ towards the [110] direction. This substrate offcut will enable to annihilate antiphase domains due to polar-on-non-polar epitaxial growth, which further reduce non-radiative recombination centers in GeSn material. Hence, growth of GeSn material on misoriented (100) substrate offers two-fold benefits: (i) reduced active defects at the GeSn/III-V heterointerface, and (ii) self-annihilation of the antiphase domain boundaries for enhancing the efficiency of optical devices. 

Properties of a double-period InAs/GaSb superlattice grown by solid-source molecular beam epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded abrupt heterointerfaces and superior material quality as verified by X-ray diffraction and transmission electron microscopy (TEM) analysis. Moreover, high-resolution TEM imaging and elemental composition profiling of the InAs/GaSb heterostructure demonstrated abrupt atomic transitions between each Sb- or As-containing epilayer. An 8 × 8 k · p model is used to compute the electronic band structure of the constituent long- and short-period superlattices, taking into account the effects of conduction and valence band mixing, quantum confinement, pseudomorphic strain, and magnetic field on the calculated dispersions. Magnetotransport measurements over a variable temperature range (390 mK to 294 K) show anisotropic transport exhibiting a striking magnetoresistance and show Shubnikov-de Haas oscillations, the latter being indicative of high quality material synthesis. The measurements also reveal the existence of at least two carrier populations contributing to in-plane conductance in the structure.